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1200V 30A APT30DQ120B APT30DQ120S APT30DQ120BG* APT30DQ120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(B)
TO - 24
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters -Inverters * Snubber Diode * PFC
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics
PRODUCT BENEFITS
* Low Losses * Low Noise Switching
1 2
7
D3PAK
* Cooler Operation * Popular TO-247 Package or Surface Mount D3PAK Package * Higher Reliability Systems * Low Forward Voltage * Low Leakage Current * Avalanche Energy Rated * Increased System Power Density
1
2
(S)
1
2
1 - Cathode 2 - Anode Back of Case - Cathode
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT30DQ120B_S(G) UNIT
1200
Volts
Maximum Average Forward Current (TC = 103C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec.
30 43 210 20 -55 to 175 300
C mJ Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 1200V VR = 1200V, TJ = 125C MIN TYP MAX UNIT
2.8 3.4 2.1
3.3
Volts
100 500 36
pF
Microsemi Website - http://www.microsemi.com
053-4244 Rev B 7-2009
A
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 800V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT30DQ120B_S(G)
TYP MAX UNIT ns
26 320 545 4 435 2100 9 180 2975 28 nC Amps ns nC Amps ns nC Amps
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance MIN TYP MAX UNIT C/W oz g
.80 0.22
Package Weight
5.9 10
lb*in N*m
Torque
Maximum Mounting Torque
1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.90 Z JC, THERMAL IMPEDANCE (C/W) 0.80 D = 0.9 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10
-5
0.7
0.5
Note:
PDM
t1 t2
0.3 SINGLE PULSE
0.1 0.05 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
053-4244 Rev B 7-2009
TYPICAL PERFORMANCE CURVES
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 125C TJ = 25C TJ = 175C 600
T = 125C J V = 800V
R
APT30DQ120B_S(G)
60A
500
400 30A 300 15A 200
TJ = -55C
100 0
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 5000 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35
T = 125C J V = 800V
60A
30 25
R
4000
60A
3000 30A 2000 15A 1000
30A 20 15 15A 10 5 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 trr trr 0.8 IRRM Qrr
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 50 45 40 35 IF(AV) (A) 30 25 20
Duty cycle = 0.5 T = 175C
J
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
1.0
0.6
0.4 Qrr 0.2 0.0
15 10 5
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
053-4244 Rev B 7-2009
APT30DQ120B_S(G)
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
e3 100% Sn
4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 13.30 (.524) 13.60(.535)
3
Cathode (Heat Sink)
1.00 (.039) 1.15(.045)
Cathode
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
18.70 (.736) 19.10 (.752)
12.40 (.488) 12.70 (.500)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114)
19.81 (.780) 20.32 (.800)
1.15 (.045) 1.45 (.057)
1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.)
2.40 (.094) 2.70 (.106) (Base of Lead)
053-4244 Rev B 7-2009
Anode
2.21 (.087) 2.59 (.102)
Heat Sink (Cathode) and Leads are Plated
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Anode Cathode Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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